All in situ - one vacuum space - thin film structures growth and investigation tool.
Two complementary methods of formation nanoscale objects:
- Pulsed Laser Deposition (PLD);
- Atomic Layer Deposition (ALD).
Pulsed Laser Deposition
- Solid-state Nd: YAG laser operating at 1, 2, 3 and 4th harmonics (wavelength 1064, 532,355 and 266 nm);
- High Т heater;
- Gas flow control;
- High vacuum (10-10 Torr).
- Multiple Component Oxides;
- High Temperature Superconductors;
- Magnetic and Metallic Material Deposition;
- Low Vapor Pressure Materials MEMS.
Atomic Layer Deposition
is used to fabricate ultrathin and conformal thin film structures for many semiconductor and thin film device applications and sequential selflimiting surface reactions to achieve control of film growth in the monolayer or sub-monolayer thickness regime.
- 4 gas lines;
- Up to 500oC heater;
- SIMS gas control.
- Moisture barrier layers;
- Device Encapsulations;
Secondary lon Mass Spectrometry
Secondary lon Mass Spectrometry (SIMS) is the most sensitive of all the commonly-employed surface analytical techniques - capable of detecting impurity elements present in а surface layer at <1ppm concentration, and bulk concentrations of impurities of around 1ppb (parts-per-billion) in favorable cases. This is because of the inherent high sensitivity associated with mass spectrometric-based techniques.
Surface Analysis by TOF-SIMS "Kore The SurfaceSeer":
- TOF-SIMS surface analysis;
- Surface mass spectrometry;
- Insulator analysis;
- Positive and Negative SIMS 1000 M/∆M;
- Mass range >1000m/z;
- Sputter cleaning capability;
- 5 minute time for analysis;
ln situ Reflection High-Energy ELectron Diffraction ("RIA-RHEED")
- Diffraction studies and growth monitoring for different applications;
- Electron beam of small spot size and energies up to 10 keV;
- Real-Time Oscillation Measurement and FFT Analysis;
- Lattice Constant Measurement;
- 2D and 3D Charts for Documentation.